Low-temperature annealing effect on the properties of p-InSe–n-In2O3 heterojunctions

Authors

  • Захар Русланович Кудринський Chernivtsi Department of Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, I. Vilde str., 5, Chernivtsi, Ukraine, 58001, Ukraine
  • Захар Дмитрович Ковалюк Chernivtsi Department of Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, I. Vilde str., 5, Chernivtsi, Ukraine, 58001, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2012.3380

Keywords:

Layered crystals, heterojunctions, impedance, defects, nanostructures

Abstract

Annealing effect on the properties of p-InSe–n-In2O3 heterojunctions is studied in the article. For the average structures with Voc=0,25 V and Isc=250 μA, the increase of Voc by 48% and Isc by 44% is observed

Author Biographies

Захар Русланович Кудринський, Chernivtsi Department of Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, I. Vilde str., 5, Chernivtsi, Ukraine, 58001

PhD student

Захар Дмитрович Ковалюк, Chernivtsi Department of Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, I. Vilde str., 5, Chernivtsi, Ukraine, 58001

Doctor of Science (Habilitation) in Physics and Mathematics, professor

Head of Chernivtsi Department of Frantsevich Institute for Problems of Materials Science

References

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  2. Катеринчук В.Н. Получение гетероструктур окисел–p-InSe с улучшенными фотоэлектрическими характеристиками. [Текст] / В.Н. Катеринчук, З.Д. Ковалюк // Физика и техника полупроводников. – 2004. – Т.38, №4, С. 417– 421.
  3. Ковалюк З.Д. Исследования изотипных фоточувствительных гетероструктур (собственный окисел)–n-InSe, полученных длительным термическим окислением. [Текст] / З.Д. Ковалюк, О.Н. Сидор, В.Н. Катеринчук, Нетяга В.В. // Физика и техника полупроводников. – 2007. – Т.41, №9, С. 1074–1077.
  4. Ластивка Г.И. Влияние низкотемпературного отжига на спектры ЯКР и характеристики гетерофотодиодов на основе GaSe–InSe. [Текст] / Г.И. Ластивка, О.Н. Сидор, З.Д. Ковалюк, А.Г. Ходожко. // Східно-Європейський журнал передових технологій. 2010. T. 4, N 5(46). С. 28-34. Режим доступу : URL : http://journals.uran.ua/eejet/article/view/2978
  5. Зи С. Физика полупроводниковых приборов: В 2-х кн. [Текст]. Т. 1. / С. Зи. – М.: Мир, 1984. – 456 с.

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Published

2012-02-01

How to Cite

Кудринський, З. Р., & Ковалюк, З. Д. (2012). Low-temperature annealing effect on the properties of p-InSe–n-In2O3 heterojunctions. Eastern-European Journal of Enterprise Technologies, 1(5(55), 25–28. https://doi.org/10.15587/1729-4061.2012.3380

Issue

Vol. 1 No. 5(55) (2012): The applied physics and materials technology

Section

Applied physics

License

Copyright (c) 2014 Захар Русланович Кудринський, Захар Дмитрович Ковалюк

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