Technological features of sedimentation of polysilicon, as bases of solar and electronic monosilicon

Authors

  • Степан Петрович Новосядлий Кафедра радіофізики та електроніки Прикарпатський національний університет ім. Василя Стефаника м. Івано-Франківськ, Ukraine
  • В.В. Кропивич Прикарпатський національний університет ім. Василя Стефаника м. Івано-Франківськ, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2010.2859

Keywords:

polysilicon, monosilicon, PV – industry

Abstract

This article shows ways to improve the technology of polysilicon, which is the basis for the production of solar and electronic monosylicon.

Author Biographies

Степан Петрович Новосядлий, Кафедра радіофізики та електроніки Прикарпатський національний університет ім. Василя Стефаника м. Івано-Франківськ

Доктор технічних наук, професор, завідуючий кафедрою

В.В. Кропивич, Прикарпатський національний університет ім. Василя Стефаника м. Івано-Франківськ

Аспірант

References

  1. С. Зи Технология СБИС/. Под ред. в двух томах; [перев., с англиского под ред., Ю. Д. Чистякова.].-М: Мир, 1986. -720 с.
  2. Новосядлий С. П. Фізико-технологічні основи субмікронної технології великих інтегральних схем./ Степан Новосядлий; –Івано-Франківськ: Сімик, 2003, -351 с.
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  5. Karl Hesse and Ewald Schindbeck/ wacker Polysilicon. Feed-stock for the photovoltaic industry//2nd Solar Silicon Conference, April11, 2005 –p126.
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Published

2010-05-28

How to Cite

Новосядлий, С. П., & Кропивич, В. (2010). Technological features of sedimentation of polysilicon, as bases of solar and electronic monosilicon. Eastern-European Journal of Enterprise Technologies, 3(7(45), 26–31. https://doi.org/10.15587/1729-4061.2010.2859

Issue

Vol. 3 No. 7(45) (2010): The applied physics and materials technology

Section

Applied physics

License

Copyright (c) 2014 Степан Петрович Новосядлий, В.В. Кропивич

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